1N4447 high speed switching diode features : ? high switching speed: max. 4 ns ? reverse voltage:max. 75v ? peak reverse voltage:max. 100 v ? pb / rohs free mechanical data : case: do-35 glass case weight: approx. 0.13g maximum ratin g s and thermal characteristics ( ta = 25 c) symbol value unit v rm 100 v v r 75 v maximum forward dc current i f 200 ma maximum average forward current i f(av) ma maximum surge forward current at tp = 1 s i fsm 2a power dissipation p d 500 mw maximum junction temperature t j 200 c storage temperature range t stg -65 to + 200 c electrical characteristics ( ta = 25 c) parameter symbol min. typ. max. unit v r = 20 v - - 25 na v r = 20 v , tj = 150 c- - 50 a forward voltage v f i f = 20 ma --1v reverse breakdown voltage v (br)r i r = 100 a (pulsed) 100 - - v diode capacitance cd - - 2 pf i f = 10 ma ,v r = 6 v, r l = 100 page 1 of 2 rev. 01 : may 9, 2006 ns 4 f = 1mhz ; v r = 0 - - reverse current test condition reverse recovery t trr i r 150 parameter maximum peak reverse voltage maximum reverse voltage do - 35 glass (do-204ah) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. cathode mark
rating and characteristic curves ( 1N4447 ) fig1. - forward current vs. fig.2 - reverse current vs. forward voltage junction temperature fig3. - capacitance between fig. 4 - reverse recovery time vs. terminals vs. reverse voltage forward current page 2 of 2 rev. 01 : may 9, 2006 forward current, i f (ma) forward voltage , v f (v) 0 0.1 0.2 0.4 0.6 0.8 1.2 1.0 10 100 1000 10 100 1000 10000 1.0 0 20 40 60 80 100 reverse current, i r (na) reverse voltage , v r (v) 0102030 diode capacitance, cd (pf) 2.5 2.0 1.5 1.0 0.5 0 t j = 125 t j = 25 c f = 1 mhz ta = 25 c 1.0 reverse recovery time, trr (ns) 10 8 6 4 2 0 0 5 10 15 20 25 reverse voltage , v r (v) reverse voltage , v r (v) t j = 25 c t j = 100 c ta = 25 c
|
